Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang; G. Louche; R. S. Duran; Y. Gnanou; S. J. Pearton; F. Ren

doi:10.1016/j.sse.2003.10.002

Gateless AlGaN/GaN HEMT response to block co-polymers

B. S. Kang, G. Louche, R. S. Duran, Y. Gnanou, S. J. Pearton, F. Ren^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Original language	English (US)
Pages (from-to)	851-854
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	5
DOIs	https://doi.org/10.1016/j.sse.2003.10.002
State	Published - May 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2003.10.002

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abstract = "Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.",

author = "Kang, {B. S.} and G. Louche and Duran, {R. S.} and Y. Gnanou and Pearton, {S. J.} and F. Ren",

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AU - Kang, B. S.

AU - Louche, G.

AU - Duran, R. S.

AU - Gnanou, Y.

AU - Pearton, S. J.

AU - Ren, F.

PY - 2004/5

Y1 - 2004/5

N2 - Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

AB - Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

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U2 - 10.1016/j.sse.2003.10.002

DO - 10.1016/j.sse.2003.10.002

M3 - Article

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SP - 851

EP - 854

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

Gateless AlGaN/GaN HEMT response to block co-polymers

Abstract

ASJC Scopus subject areas

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