Generation of multiple energy bandgaps using a gray mask process and quantum well intermixing

Seng Lee Ng; Hwi Siong Lim; Yee Loy Lam; Yuen Chuen Chan; Boon Siew Ooi; Vincent Aimez; Jacques Beauvais; Jean Beerens

doi:10.1143/jjap.41.1080

Generation of multiple energy bandgaps using a gray mask process and quantum well intermixing

Seng Lee Ng^*, Hwi Siong Lim, Yee Loy Lam, Yuen Chuen Chan, Boon Siew Ooi, Vincent Aimez, Jacques Beauvais, Jean Beerens

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.

Original language	English (US)
Pages (from-to)	1080-1084
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	2 B
DOIs	https://doi.org/10.1143/jjap.41.1080
State	Published - Feb 2002
Externally published	Yes

Keywords

Gray mask
Ion-implantation induced disordering
Reactive ion etching

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/jjap.41.1080

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abstract = "We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.",

keywords = "Gray mask, Ion-implantation induced disordering, Reactive ion etching",

author = "Ng, {Seng Lee} and Lim, {Hwi Siong} and Lam, {Yee Loy} and Chan, {Yuen Chuen} and Ooi, {Boon Siew} and Vincent Aimez and Jacques Beauvais and Jean Beerens",

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AU - Ng, Seng Lee

AU - Lim, Hwi Siong

AU - Lam, Yee Loy

AU - Chan, Yuen Chuen

AU - Ooi, Boon Siew

AU - Aimez, Vincent

AU - Beauvais, Jacques

AU - Beerens, Jean

PY - 2002/2

Y1 - 2002/2

N2 - We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.

AB - We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.

KW - Gray mask

KW - Ion-implantation induced disordering

KW - Reactive ion etching

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U2 - 10.1143/jjap.41.1080

DO - 10.1143/jjap.41.1080

M3 - Article

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SN - 0021-4922

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2 B

ER -

Generation of multiple energy bandgaps using a gray mask process and quantum well intermixing

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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