Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

Engineering

• Low-Temperature 100%
• Metal Oxide Semiconductor 100%
• Interface Trap 100%
• Gate Stack 33%
• Applied Voltage 33%
• Gate Oxide 33%
• Metal Gate Electrode 33%
• Frequency Method 33%
• Radio Frequency 33%
• Vapor Deposition 33%
• Chemical Vapor Deposition 33%
• Atomic Layer Deposition 33%
• Surface Potential 33%

Material Science

• Germanium 100%
• Capacitor 100%
• Metal Oxide 75%
• Oxide Semiconductor 75%
• Capacitance 50%
• Al2O3 50%
• Density 50%
• Plasma-Enhanced Chemical Vapor Deposition 25%
• Electrical Property 25%
• Oxide Compound 25%

Keyphrases

• MOS Capacitor 100%
• High-k Interface 33%
• Conductance Method 33%
• High-low Frequency 33%
• Terman 33%
• High-frequency Capacitance 33%