@inproceedings{87fbdf35804944b0bfabcca1804ca034,
title = "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode",
abstract = "A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (2021) plane GaN substrate. The device shows a low modulation voltage of −2.5 V and ∼ GHz −3 dB bandwidth, enabling 1.7 Gbps data transmission.",
author = "Chao Shen and Changmin Lee and Ng, {Tien Khee} and Speck, {James S.} and Shuji Nakamura and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and Eldesouki, {Munir M.} and Ooi, {Boon S.}",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) (No. KACST TIC R2-FP-008), KAUST baseline funding (BAS/1/1614-01-01), and KACST-KAUST-UCSB Solid-State Lighting Program.",
year = "2017",
month = jan,
day = "30",
doi = "10.1109/IPCon.2016.7831077",
language = "English (US)",
isbn = "9781509019069",
pages = "813--814",
booktitle = "2016 IEEE Photonics Conference (IPC)",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
}