Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

Ko Chun Lee, Jose Ramon Duran Retamal, Fei Xue, Bin Cheng, Hao Ling Tang, Ming Hui Chiu, Wei Jin Hu, Chih I. Wu, Mei Hsin Chen, Lain-Jong Li, Chen Hsin Lien, Jr-Hau He

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.
Original languageEnglish (US)
Title of host publication2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Number of pages2
ISBN (Print)9781728142326
StatePublished - Sep 23 2020


Dive into the research topics of 'Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si'. Together they form a unique fingerprint.

Cite this