Giant uniaxial piezoresistance in GMR perovskite La0.85Sr0.15MnO3

Ning Zhang; Weiping Ding; Zaibing Guo; Wei Zhong; Dingyu Xing; Youwei Du

doi:10.1016/0375-9601(96)00476-8

Giant uniaxial piezoresistance in GMR perovskite La_0.85Sr_0.15MnO₃

Ning Zhang^*, Weiping Ding, Zaibing Guo, Wei Zhong, Dingyu Xing, Youwei Du

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The uniaxial-pressure dependences of electric and magnetic properties have been investigated in perovskite-type La-Sr-Mn-O. A giant piezoresistance (GPR) effect and a remarkable pressure-induced increase of T_p, the onset of the metal-semiconductor-like (M-S) transition, have been observed. The piezoresistance value (PR) and the pressure coefficient of T_p are all larger by two orders of magnitude than that in the case of hydrostatic pressure. Piezoresistance and magnetoresistance peaks were found to locate at almost the same temperature. This fact suggests that GMR and GPR may originate from the same mechanism(s) and may be relative to lattice transformation(s).

Original language	English (US)
Pages (from-to)	319-323
Number of pages	5
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	219
Issue number	5-6
DOIs	https://doi.org/10.1016/0375-9601(96)00476-8
State	Published - Aug 26 1996
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Giant uniaxial piezoresistance in GMR perovskite La0.85Sr0.15MnO3",

abstract = "The uniaxial-pressure dependences of electric and magnetic properties have been investigated in perovskite-type La-Sr-Mn-O. A giant piezoresistance (GPR) effect and a remarkable pressure-induced increase of Tp, the onset of the metal-semiconductor-like (M-S) transition, have been observed. The piezoresistance value (PR) and the pressure coefficient of Tp are all larger by two orders of magnitude than that in the case of hydrostatic pressure. Piezoresistance and magnetoresistance peaks were found to locate at almost the same temperature. This fact suggests that GMR and GPR may originate from the same mechanism(s) and may be relative to lattice transformation(s).",

author = "Ning Zhang and Weiping Ding and Zaibing Guo and Wei Zhong and Dingyu Xing and Youwei Du",

note = "Funding Information: This work was done at the Departmento f Physics, Nanjing University, Nanjing, China and supported by the 85-6 NMS, NSFS & NAMC, PRC.",

year = "1996",

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doi = "10.1016/0375-9601(96)00476-8",

language = "English (US)",

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journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

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TY - JOUR

T1 - Giant uniaxial piezoresistance in GMR perovskite La0.85Sr0.15MnO3

AU - Zhang, Ning

AU - Ding, Weiping

AU - Guo, Zaibing

AU - Zhong, Wei

AU - Xing, Dingyu

AU - Du, Youwei

N1 - Funding Information: This work was done at the Departmento f Physics, Nanjing University, Nanjing, China and supported by the 85-6 NMS, NSFS & NAMC, PRC.

PY - 1996/8/26

Y1 - 1996/8/26

N2 - The uniaxial-pressure dependences of electric and magnetic properties have been investigated in perovskite-type La-Sr-Mn-O. A giant piezoresistance (GPR) effect and a remarkable pressure-induced increase of Tp, the onset of the metal-semiconductor-like (M-S) transition, have been observed. The piezoresistance value (PR) and the pressure coefficient of Tp are all larger by two orders of magnitude than that in the case of hydrostatic pressure. Piezoresistance and magnetoresistance peaks were found to locate at almost the same temperature. This fact suggests that GMR and GPR may originate from the same mechanism(s) and may be relative to lattice transformation(s).

AB - The uniaxial-pressure dependences of electric and magnetic properties have been investigated in perovskite-type La-Sr-Mn-O. A giant piezoresistance (GPR) effect and a remarkable pressure-induced increase of Tp, the onset of the metal-semiconductor-like (M-S) transition, have been observed. The piezoresistance value (PR) and the pressure coefficient of Tp are all larger by two orders of magnitude than that in the case of hydrostatic pressure. Piezoresistance and magnetoresistance peaks were found to locate at almost the same temperature. This fact suggests that GMR and GPR may originate from the same mechanism(s) and may be relative to lattice transformation(s).

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U2 - 10.1016/0375-9601(96)00476-8

DO - 10.1016/0375-9601(96)00476-8

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VL - 219

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 5-6

ER -

Giant uniaxial piezoresistance in GMR perovskite La_0.85Sr_0.15MnO₃

Abstract

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