Grain boundary mediated leakage current in polycrystalline HfO2 films

Keyphrases

• Grain Boundary 100%
• Leakage Current 100%
• HfO2 Films 100%
• Memory Device 20%
• Electrical Properties 20%
• First-principles Calculations 20%
• Electronic Properties 20%
• Logic Devices 20%
• Tunneling Current 20%
• Oxygen Vacancy Defects 20%
• Oxide Film Thickness 20%
• Direct Tunneling 20%
• Conductive Atomic Force Microscopy (C-AFM) 20%
• Trap-assisted Tunneling 20%
• Local Reduction 20%

Material Science

• Grain Boundary 100%
• Film Thickness 20%
• Electronic Property 20%
• Oxygen Vacancy 20%
• Vacancy Defect 20%
• Film 20%
• Atomic Force Microscopy 20%
• Oxide Film 20%