Graphene nanoplatelets embedded in HfO2 for MOS memory

N. El-Atab, B. B. Turgut, A. K. Okyay, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al2O3/HfO2 tunnel oxide is demonstrated. Using C-Vgate measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.

Original languageEnglish (US)
Title of host publicationGraphene and Beyond
Subtitle of host publication2D Materials
EditorsH. Grebel, Y. S. Obeng, R. Martel, A. Hirsch, M. S. Arnold, V. Di Noto
PublisherElectrochemical Society, Inc.
Number of pages5
ISBN (Electronic)9781607686378
StatePublished - 2015
EventSymposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


ConferenceSymposium on Graphene and Beyond: 2D Materials - 227th ECS Meeting
Country/TerritoryUnited States

ASJC Scopus subject areas

  • General Engineering


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