Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda; Arokia Nathan; Paul Wöbkenberg; Florian Colleaux; Khashayar Ghaffarzadeh; Thomas D. Anthopoulos; Manish Chhowalla

doi:10.1063/1.4799970

Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Goki Eda^*, Arokia Nathan, Paul Wöbkenberg, Florian Colleaux, Khashayar Ghaffarzadeh, Thomas D. Anthopoulos, Manish Chhowalla

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

Original language	English (US)
Article number	133108
Journal	Applied Physics Letters
Volume	102
Issue number	13
DOIs	https://doi.org/10.1063/1.4799970
State	Published - Apr 1 2013
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Graphene oxide gate dielectric for graphene-based monolithic field effect transistors",

abstract = "We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.",

author = "Goki Eda and Arokia Nathan and Paul W{\"o}bkenberg and Florian Colleaux and Khashayar Ghaffarzadeh and Anthopoulos, {Thomas D.} and Manish Chhowalla",

note = "Funding Information: G.E. acknowledges the Royal Society for the Newton International Fellowship and financial support from the Centre for Advanced Structural Ceramics (CASC) at Imperial College London. G.E. also acknowledges Singapore National Research Foundation for partly funding the research under NRF Research Fellowship (NRF-NRFF2011-02). M.C. acknowledges support from NSF ECCS Award 1128335.",

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doi = "10.1063/1.4799970",

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T1 - Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

AU - Eda, Goki

AU - Nathan, Arokia

AU - Wöbkenberg, Paul

AU - Colleaux, Florian

AU - Ghaffarzadeh, Khashayar

AU - Anthopoulos, Thomas D.

AU - Chhowalla, Manish

N1 - Funding Information: G.E. acknowledges the Royal Society for the Newton International Fellowship and financial support from the Centre for Advanced Structural Ceramics (CASC) at Imperial College London. G.E. also acknowledges Singapore National Research Foundation for partly funding the research under NRF Research Fellowship (NRF-NRFF2011-02). M.C. acknowledges support from NSF ECCS Award 1128335.

PY - 2013/4/1

Y1 - 2013/4/1

N2 - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

AB - We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the uppermost layers such that a semiconductor-on-insulator type heterostructure is realized. In such heterostructures, the reduced uppermost layers and the unmodified bulk GO layers serve as the channel and gate dielectric components, respectively, of a thin film FET.

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DO - 10.1063/1.4799970

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

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ER -

Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

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