Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion

H. S. Djie; O. Gunawan; D. N. Wang; B. S. Ooi; J. C.M. Hwang

doi:10.1103/PhysRevB.73.155324

Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion

H. S. Djie, O. Gunawan, D. N. Wang, B. S. Ooi^*, J. C.M. Hwang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy Hm for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs AlGaAs quantum-well materials confirming the role of SiO2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots.

Original language	English (US)
Article number	155324
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.73.155324
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{f3421f3f4e2a41688b56a522939a5728,

title = "Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion",

abstract = "The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy Hm for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs AlGaAs quantum-well materials confirming the role of SiO2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots.",

author = "Djie, {H. S.} and O. Gunawan and Wang, {D. N.} and Ooi, {B. S.} and Hwang, {J. C.M.}",

year = "2006",

doi = "10.1103/PhysRevB.73.155324",

language = "English (US)",

volume = "73",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion

AU - Djie, H. S.

AU - Gunawan, O.

AU - Wang, D. N.

AU - Ooi, B. S.

AU - Hwang, J. C.M.

PY - 2006

Y1 - 2006

N2 - The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy Hm for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs AlGaAs quantum-well materials confirming the role of SiO2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots.

AB - The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy Hm for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs AlGaAs quantum-well materials confirming the role of SiO2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=33646356483&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.73.155324

DO - 10.1103/PhysRevB.73.155324

M3 - Article

AN - SCOPUS:33646356483

SN - 1098-0121

VL - 73

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

M1 - 155324

ER -

Group-III vacancy induced Inx Ga1-x As quantum dot interdiffusion

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