Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

Yik Khoon Ee; Xiao Hang Li; J. M. Biser; W. Cao; Helen M. Chan; R. P. Vinci; Nelson Tansu

Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

Yik Khoon Ee^*, Xiao Hang Li, J. M. Biser, W. Cao, Helen M. Chan, R. P. Vinci, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
State	Published - 2010
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country/Territory	United States
City	San Jose, CA
Period	05/16/10 → 05/21/10

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{d2adfaa53dd5400d8278c28904684683,

title = "Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate",

abstract = "Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.",

author = "Ee, {Yik Khoon} and Li, {Xiao Hang} and Biser, {J. M.} and W. Cao and Chan, {Helen M.} and Vinci, {R. P.} and Nelson Tansu",

year = "2010",

language = "English (US)",

isbn = "9781557528896",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

Ee, YK, Li, XH, Biser, JM, Cao, W, Chan, HM, Vinci, RP & Tansu, N 2010, Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. in Conference on Lasers and Electro-Optics, CLEO 2010. Conference on Lasers and Electro-Optics, CLEO 2010, San Jose, CA, United States, 05/16/10.

Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate. / Ee, Yik Khoon; Li, Xiao Hang; Biser, J. M. et al.
Conference on Lasers and Electro-Optics, CLEO 2010. 2010.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

AU - Ee, Yik Khoon

AU - Li, Xiao Hang

AU - Biser, J. M.

AU - Cao, W.

AU - Chan, Helen M.

AU - Vinci, R. P.

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.

AB - Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.

UR - http://www.scopus.com/inward/record.url?scp=84894093348&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894093348

SN - 9781557528896

BT - Conference on Lasers and Electro-Optics, CLEO 2010

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

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ASJC Scopus subject areas

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