Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition

Nazek El-Atab; Farsad Imtiaz Chowdhury; Turkan Gamze Ulusoy; Amir Ghobadi; Amin Nazirzadeh; Ali K. Okyay; Ammar Nayfeh

doi:10.1109/NANO.2016.7751340

Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition

Nazek El-Atab, Farsad Imtiaz Chowdhury, Turkan Gamze Ulusoy, Amir Ghobadi, Amin Nazirzadeh, Ali K. Okyay, Ammar Nayfeh

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.

Original language	English (US)
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	687-689
Number of pages	3
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751340
State	Published - Nov 21 2016
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: Aug 22 2016 → Aug 25 2016

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	08/22/16 → 08/25/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751340

Cite this

El-Atab, N., Chowdhury, F. I., Ulusoy, T. G., Ghobadi, A., Nazirzadeh, A., Okyay, A. K., & Nayfeh, A. (2016). Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 687-689). Article 7751340 (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751340

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title = "Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition",

abstract = "In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.",

author = "Nazek El-Atab and Chowdhury, {Farsad Imtiaz} and Ulusoy, {Turkan Gamze} and Amir Ghobadi and Amin Nazirzadeh and Okyay, {Ali K.} and Ammar Nayfeh",

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El-Atab, N, Chowdhury, FI, Ulusoy, TG, Ghobadi, A, Nazirzadeh, A, Okyay, AK & Nayfeh, A 2016, Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751340, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 687-689, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 08/22/16. https://doi.org/10.1109/NANO.2016.7751340

Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition. / El-Atab, Nazek; Chowdhury, Farsad Imtiaz; Ulusoy, Turkan Gamze et al.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 687-689 7751340 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition

AU - El-Atab, Nazek

AU - Chowdhury, Farsad Imtiaz

AU - Ulusoy, Turkan Gamze

AU - Ghobadi, Amir

AU - Nazirzadeh, Amin

AU - Okyay, Ali K.

AU - Nayfeh, Ammar

PY - 2016/11/21

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N2 - In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.

AB - In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.

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M3 - Conference contribution

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El-Atab N, Chowdhury FI, Ulusoy TG, Ghobadi A, Nazirzadeh A, Okyay AK et al. Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 687-689. 7751340. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751340

Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition

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