Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

Yasuhiro Isobe, Daisuke Iida, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imade, Yasuo Kitaoka, Yusuke Mori

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