TY - GEN
T1 - Growth of Broadband Gain Quantum Dot Mode-Locked Laser on Si with Varied InGaAs Well Thickness
AU - Jung, Daehwan
AU - Norman, Justin
AU - Liu, Songtao
AU - Shang, Chen
AU - Wan, Yating
AU - Gossard, Arthur
AU - Bowers, John
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18
PY - 2019/7/1
Y1 - 2019/7/1
N2 - We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.
AB - We report broadband gain InAs quantum dot mode-locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-Thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.
UR - https://ieeexplore.ieee.org/document/8925208/
UR - http://www.scopus.com/inward/record.url?scp=85077518090&partnerID=8YFLogxK
U2 - 10.1109/OMN.2019.8925208
DO - 10.1109/OMN.2019.8925208
M3 - Conference contribution
SN - 9781728145013
SP - 24
EP - 25
BT - International Conference on Optical MEMS and Nanophotonics
PB - IEEE Computer [email protected]
ER -