GaInN films with different In compositions were grown using a raised-pressure metalorganic vapor phase epitaxy (MOVPE) system operated from 100 to 200 kPa. A precise X-ray diffraction study showed that the In composition increases with an increasing pressure during growth, which is consistent with the result of a thermodynamic analysis. © 2010 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- Physics and Astronomy(all)