Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, S. P. DenBaars, James S. Speck

Research output: Contribution to journalArticlepeer-review

10 Scopus citations
Original languageEnglish (US)
Pages (from-to)095119
JournalAIP Advances
Issue number9
StatePublished - Sep 1 2021
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this