Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel; Christian J. Zollner; Burhan K. Saifaddin; Michael Iza; Jianfeng Wang; Yifan Yao; Michael Wang; Humberto Foronda; Igor Prozheev; Filip Tuomisto; Abdulrahman Albadri; Shuji Nakamura; S. P. DenBaars; James S. Speck

doi:10.1063/5.0066652

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, S. P. DenBaars, James S. Speck

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Original language	English (US)
Pages (from-to)	095119
Journal	AIP Advances
Volume	11
Issue number	9
DOIs	https://doi.org/10.1063/5.0066652
State	Published - Sep 1 2021
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/5.0066652

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@article{689f712d04394ada86c8e4f5cbd7f15d,

title = "Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration",

author = "Almogbel, {Abdullah S.} and Zollner, {Christian J.} and Saifaddin, {Burhan K.} and Michael Iza and Jianfeng Wang and Yifan Yao and Michael Wang and Humberto Foronda and Igor Prozheev and Filip Tuomisto and Abdulrahman Albadri and Shuji Nakamura and DenBaars, {S. P.} and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2021-09-28 Acknowledgements: This work was funded by the KACST-KAUST-UCSB Technology transfer program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at UC Santa Barbara; a part of this work was carried out in the California NanoSystems Institute at UCSB. The research reported here made use of shared facilities of the UCSB MRSEC (Grant No. NSF DMR 1720256). A portion of this research was conducted in the UCSB nanofabrication facility, NSF NNIN network (Grant No. ECS-0335765). This work was partially funded by the Academy of Finland, Project No. 315082. The authors would like to gratefully thank Dr. Tom Mates for SIMS measurements and Dr. Stacia Keller and Dr. Mohammed Abo Alreesh for their insightful inputs. In addition, the authors would like to thank Dr. Youli Li from MRL and the cleanroom staff at the UCSB nanofabrication facility for the technical support provided. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2021",

month = sep,

day = "1",

doi = "10.1063/5.0066652",

language = "English (US)",

volume = "11",

pages = "095119",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "AIP Publishing",

number = "9",

}

TY - JOUR

T1 - Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

AU - Almogbel, Abdullah S.

AU - Zollner, Christian J.

AU - Saifaddin, Burhan K.

AU - Iza, Michael

AU - Wang, Jianfeng

AU - Yao, Yifan

AU - Wang, Michael

AU - Foronda, Humberto

AU - Prozheev, Igor

AU - Tuomisto, Filip

AU - Albadri, Abdulrahman

AU - Nakamura, Shuji

AU - DenBaars, S. P.

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2021-09-28 Acknowledgements: This work was funded by the KACST-KAUST-UCSB Technology transfer program and the Solid State Lighting and Energy Electronics Center (SSLEEC) at UC Santa Barbara; a part of this work was carried out in the California NanoSystems Institute at UCSB. The research reported here made use of shared facilities of the UCSB MRSEC (Grant No. NSF DMR 1720256). A portion of this research was conducted in the UCSB nanofabrication facility, NSF NNIN network (Grant No. ECS-0335765). This work was partially funded by the Academy of Finland, Project No. 315082. The authors would like to gratefully thank Dr. Tom Mates for SIMS measurements and Dr. Stacia Keller and Dr. Mohammed Abo Alreesh for their insightful inputs. In addition, the authors would like to thank Dr. Youli Li from MRL and the cleanroom staff at the UCSB nanofabrication facility for the technical support provided. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2021/9/1

Y1 - 2021/9/1

UR - http://hdl.handle.net/10754/671957

UR - https://aip.scitation.org/doi/10.1063/5.0066652

U2 - 10.1063/5.0066652

DO - 10.1063/5.0066652

M3 - Article

SN - 2158-3226

VL - 11

SP - 095119

JO - AIP Advances

JF - AIP Advances

IS - 9

ER -

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

ASJC Scopus subject areas

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