Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

Yong Qin; Rusen Yang; Zhong Lin Wang

doi:10.1021/jp808869j

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

Yong Qin, Rusen Yang, Zhong Lin Wang

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

Original language	English (US)
Pages (from-to)	18734-18736
Number of pages	3
Journal	The Journal of Physical Chemistry C
Volume	112
Issue number	48
DOIs	https://doi.org/10.1021/jp808869j
State	Published - Nov 8 2008
Externally published	Yes

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10.1021/jp808869j

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@article{62c65cc80aac4a62a7b062519e116da2,

title = "Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate",

abstract = "A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. {\textcopyright} 2008 American Chemical Society.",

author = "Yong Qin and Rusen Yang and Wang, {Zhong Lin}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2008",

month = nov,

day = "8",

doi = "10.1021/jp808869j",

language = "English (US)",

volume = "112",

pages = "18734--18736",

journal = "The Journal of Physical Chemistry C",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

AU - Qin, Yong

AU - Yang, Rusen

AU - Wang, Zhong Lin

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), DARPA STTR with Magnolia Optical Inc., BES DOE (DE-FG02-07ER46394), Air Force Office (FA9550-08-1-0446), KAUST Global Research Partnership, National Institute For Materials, Japan, Emory-Georgia Tech CCNE from NIH, NSF (DMS 0706436, CMMI 0403671). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2008/11/8

Y1 - 2008/11/8

N2 - A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

AB - A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

UR - http://hdl.handle.net/10754/598439

UR - https://pubs.acs.org/doi/10.1021/jp808869j

UR - http://www.scopus.com/inward/record.url?scp=57949116414&partnerID=8YFLogxK

U2 - 10.1021/jp808869j

DO - 10.1021/jp808869j

M3 - Article

SN - 1932-7447

VL - 112

SP - 18734

EP - 18736

JO - The Journal of Physical Chemistry C

JF - The Journal of Physical Chemistry C

IS - 48

ER -

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

Abstract

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