Growth of ReS2 thin films by pulsed laser deposition

B. Vishal; H. Sharona; U. Bhat; A. Paul; M. B. Sreedhara; V. Rajaji; S. C. Sarma; C. Narayana; S. C. Peter; R. Datta

doi:10.1016/j.tsf.2019.06.007

Growth of ReS₂ thin films by pulsed laser deposition

B. Vishal^*, H. Sharona, U. Bhat, A. Paul, M. B. Sreedhara, V. Rajaji, S. C. Sarma, C. Narayana, S. C. Peter, R. Datta

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We present results on growth of ReS₂ thin film both on c plane sapphire substrate and MoS₂ template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS₂ ⊥ (0001)Al₂O₃ and (0001)ReS₂ ⊥ (0001)MoS₂ ∥ (0001)Al₂O₃ at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS₂ template compared to sapphire substrate. The results show that PLD is suitable to grow ReS₂ thin film over large area (10 × 10 mm²) for practical device application.

Original language	English (US)
Pages (from-to)	81-87
Number of pages	7
Journal	Thin Solid Films
Volume	685
DOIs	https://doi.org/10.1016/j.tsf.2019.06.007
State	Published - Sep 1 2019

Keywords

2D materials
Molybdenum disulphide
Rhenium disulphide
Thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2019.06.007

Cite this

@article{ca528e0eddef42468aa2da7360ff9953,

title = "Growth of ReS2 thin films by pulsed laser deposition",

abstract = "We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application.",

keywords = "2D materials, Molybdenum disulphide, Rhenium disulphide, Thin films",

author = "B. Vishal and H. Sharona and U. Bhat and A. Paul and Sreedhara, {M. B.} and V. Rajaji and Sarma, {S. C.} and C. Narayana and Peter, {S. C.} and R. Datta",

note = "Funding Information: The authors sincerely acknowledge International Centre for Materials Science (ICMS), JNCASR, INDIA for the research funding and advanced characterization facilities. Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2019.06.007",

language = "English (US)",

volume = "685",

pages = "81--87",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Growth of ReS2 thin films by pulsed laser deposition

AU - Vishal, B.

AU - Sharona, H.

AU - Bhat, U.

AU - Paul, A.

AU - Sreedhara, M. B.

AU - Rajaji, V.

AU - Sarma, S. C.

AU - Narayana, C.

AU - Peter, S. C.

AU - Datta, R.

N1 - Funding Information: The authors sincerely acknowledge International Centre for Materials Science (ICMS), JNCASR, INDIA for the research funding and advanced characterization facilities. Publisher Copyright: © 2019 Elsevier B.V.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application.

AB - We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application.

KW - 2D materials

KW - Molybdenum disulphide

KW - Rhenium disulphide

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85067201790&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.06.007

DO - 10.1016/j.tsf.2019.06.007

M3 - Article

AN - SCOPUS:85067201790

SN - 0040-6090

VL - 685

SP - 81

EP - 87

JO - Thin Solid Films

JF - Thin Solid Films

ER -