Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao; Guangyu Liu; Xiaohang Li; Ronald A. Arif; G. S. Huang; Yik Khoon Ee; Nelson Tansu

doi:10.1117/12.808542

Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Hongping Zhao^*, Guangyu Liu, Xiaohang Li, Ronald A. Arif, G. S. Huang, Yik Khoon Ee, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

Original language	English (US)
Article number	72310E
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7231
DOIs	https://doi.org/10.1117/12.808542
State	Published - 2009
Externally published	Yes
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII - San Jose, CA, United States Duration: Jan 27 2009 → Jan 29 2009

Keywords

III-nitride
InGaN QWs
Light emitting diodes
Staggered InGaN QWs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.808542

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title = "Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile",

abstract = "Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.",

keywords = "III-nitride, InGaN QWs, Light emitting diodes, Staggered InGaN QWs",

author = "Hongping Zhao and Guangyu Liu and Xiaohang Li and Arif, {Ronald A.} and Huang, {G. S.} and Ee, {Yik Khoon} and Nelson Tansu",

year = "2009",

doi = "10.1117/12.808542",

language = "English (US)",

volume = "7231",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII ; Conference date: 27-01-2009 Through 29-01-2009",

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TY - JOUR

T1 - Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Li, Xiaohang

AU - Arif, Ronald A.

AU - Huang, G. S.

AU - Ee, Yik Khoon

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

N2 - Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

AB - Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k·p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

KW - III-nitride

KW - InGaN QWs

KW - Light emitting diodes

KW - Staggered InGaN QWs

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U2 - 10.1117/12.808542

DO - 10.1117/12.808542

M3 - Conference article

AN - SCOPUS:63449122812

SN - 0277-786X

VL - 7231

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 72310E

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII

Y2 - 27 January 2009 through 29 January 2009

ER -

Growth of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded temperature profile

Abstract

Keywords

ASJC Scopus subject areas

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