Growth of thick GaInN on grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC

Tetsuya Matsubara; Ryota Senda; Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1016/j.jcrysgro.2009.01.062

Growth of thick GaInN on grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC

Tetsuya Matsubara, Ryota Senda, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We succeeded in growing high-crystalline-quality thick (1 0 1̄ 1̄) Ga0.92In0.08N films on a grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. © 2009 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	2926-2928
Number of pages	3
Journal	Journal of Crystal Growth
Volume	311
Issue number	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.062
State	Published - May 1 2009
Externally published	Yes

ASJC Scopus subject areas

Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics

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10.1016/j.jcrysgro.2009.01.062

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title = "Growth of thick GaInN on grooved (1 0 {\=1} {\=1}) GaN/(1 0 {\=1} {\=2}) 4H-SiC",

abstract = "We succeeded in growing high-crystalline-quality thick (1 0 {\=1} {\=1}) Ga0.92In0.08N films on a grooved (1 0 {\=1} {\=1}) GaN/(1 0 {\=1} {\=2}) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

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AU - Matsubara, Tetsuya

AU - Senda, Ryota

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

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PY - 2009/5/1

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N2 - We succeeded in growing high-crystalline-quality thick (1 0 1̄ 1̄) Ga0.92In0.08N films on a grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. © 2009 Elsevier B.V. All rights reserved.

AB - We succeeded in growing high-crystalline-quality thick (1 0 1̄ 1̄) Ga0.92In0.08N films on a grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure. © 2009 Elsevier B.V. All rights reserved.

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Growth of thick GaInN on grooved (1 0 1̄ 1̄) GaN/(1 0 1̄ 2̄) 4H-SiC

Abstract

ASJC Scopus subject areas

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