Growth selectivity of hexagonal-boron nitride layers on Ni with various crystal orientations

Yi Hsien Lee*, Keng Ku Liu, Ang Yu Lu, Chih Yu Wu, Cheng Te Lin, Wenjing Zhang, Ching Yuan Su, Chang Lung Hsu, Tsung Wu Lin, Kung Hwu Wei, Yumeng Shi, Lain-Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

76 Scopus citations


Layered hexagonal-boron nitride (h-BN) films were synthesized by chemical vapor deposition (CVD) on Ni foils using ammonia borane as a precursor. Confocal Raman spectroscopy and electron backscatter diffraction (EBSD) were used to probe the effect of underlying Ni crystals with various orientations on growth behaviors of h-BN layers. The growth of the h-BN layers strongly depends on the Ni crystal orientations, where the growth rate of h-BN is larger on Ni(100)-like crystal surfaces but the growth on Ni(111)-like surfaces is not detectable, suggesting that Ni (100)-like facets are likely to promote the growth of h-BN compared with Ni (111)-like surfaces. The observation is in clear contrast to the reported growth of h-BN on Ni(111) in an ultrahigh vacuum environment. The as-grown CVD h-BN films on Ni exhibit a layered structure as revealed by atomic force microscopy (AFM). Thin h-BN layers are found on the Ni domain with a low growth rate. The observation of h-BN growth on various Ni grains may provide insights for the control of thickness, size and morphology of CVD h-BN films.

Original languageEnglish (US)
Pages (from-to)111-115
Number of pages5
JournalRSC Advances
Issue number1
StatePublished - Jan 7 2012

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering


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