Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

Guangyu Liu; Hongping Zhao; Jing Zhang; Nelson Tansu

doi:10.1364/cleo_si.2011.cmee6

Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

Guangyu Liu^*, Hongping Zhao, Jing Zhang, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

Original language	English (US)
Title of host publication	2011 Conference on Lasers and Electro-Optics
Subtitle of host publication	Laser Science to Photonic Applications, CLEO 2011
Publisher	IEEE Computer Society
ISBN (Print)	9781557529107
DOIs	https://doi.org/10.1364/cleo_si.2011.cmee6
State	Published - 2011
Externally published	Yes

Publication series

Name	2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/cleo_si.2011.cmee6

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Liu, G., Zhao, H., Zhang, J., & Tansu, N. (2011). Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Article 5950224 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). IEEE Computer Society. https://doi.org/10.1364/cleo_si.2011.cmee6

Liu, Guangyu ; Zhao, Hongping ; Zhang, Jing et al. / Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

@inproceedings{5b62f78222454eab805edb6f0247ab62,

title = "Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression",

abstract = "The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.",

author = "Guangyu Liu and Hongping Zhao and Jing Zhang and Nelson Tansu",

year = "2011",

doi = "10.1364/cleo_si.2011.cmee6",

language = "English (US)",

isbn = "9781557529107",

series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",

publisher = "IEEE Computer Society",

booktitle = "2011 Conference on Lasers and Electro-Optics",

address = "United States",

}

Liu, G, Zhao, H, Zhang, J & Tansu, N 2011, Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. in 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011., 5950224, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, IEEE Computer Society. https://doi.org/10.1364/cleo_si.2011.cmee6

Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. / Liu, Guangyu; Zhao, Hongping; Zhang, Jing et al.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. 5950224 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

AU - Liu, Guangyu

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Tansu, Nelson

PY - 2011

Y1 - 2011

N2 - The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

AB - The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

UR - http://www.scopus.com/inward/record.url?scp=80052127505&partnerID=8YFLogxK

U2 - 10.1364/cleo_si.2011.cmee6

DO - 10.1364/cleo_si.2011.cmee6

M3 - Conference contribution

AN - SCOPUS:80052127505

SN - 9781557529107

T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

BT - 2011 Conference on Lasers and Electro-Optics

PB - IEEE Computer Society

ER -

Liu G, Zhao H, Zhang J, Tansu N. Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression. In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society. 2011. 5950224. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). doi: 10.1364/cleo_si.2011.cmee6

Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression

Abstract

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