Growths of lattice-matched AlInN / GaN for optoelectronics applications

Guangyu Liu; Hongping Zhao; Jing Zhang; Hua Tong; G. S. Huang; Nelson Tansu

doi:10.1109/PHOTONICS.2010.5698997

Growths of lattice-matched AlInN / GaN for optoelectronics applications

Guangyu Liu^*, Hongping Zhao, Jing Zhang, Hua Tong, G. S. Huang, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.

Original language	English (US)
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	534-535
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698997
State	Published - 2010
Externally published	Yes
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: Nov 7 2010 → Nov 11 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Other

Other	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	11/7/10 → 11/11/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHOTONICS.2010.5698997

Cite this

Liu, G., Zhao, H., Zhang, J., Tong, H., Huang, G. S., & Tansu, N. (2010). Growths of lattice-matched AlInN / GaN for optoelectronics applications. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 534-535). Article 5698997 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698997

@inproceedings{18d0fea2bff6437b93120c44c5c24339,

title = "Growths of lattice-matched AlInN / GaN for optoelectronics applications",

abstract = "Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.",

author = "Guangyu Liu and Hongping Zhao and Jing Zhang and Hua Tong and Huang, {G. S.} and Nelson Tansu",

year = "2010",

doi = "10.1109/PHOTONICS.2010.5698997",

language = "English (US)",

isbn = "9781424453689",

series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

pages = "534--535",

booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",

}

Liu, G, Zhao, H, Zhang, J, Tong, H, Huang, GS & Tansu, N 2010, Growths of lattice-matched AlInN / GaN for optoelectronics applications. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698997, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 534-535, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 11/7/10. https://doi.org/10.1109/PHOTONICS.2010.5698997

Growths of lattice-matched AlInN / GaN for optoelectronics applications. / Liu, Guangyu; Zhao, Hongping; Zhang, Jing et al.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 534-535 5698997 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growths of lattice-matched AlInN / GaN for optoelectronics applications

AU - Liu, Guangyu

AU - Zhao, Hongping

AU - Zhang, Jing

AU - Tong, Hua

AU - Huang, G. S.

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.

AB - Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780°C and pressure of 20 Torr.

UR - http://www.scopus.com/inward/record.url?scp=79951892443&partnerID=8YFLogxK

U2 - 10.1109/PHOTONICS.2010.5698997

DO - 10.1109/PHOTONICS.2010.5698997

M3 - Conference contribution

AN - SCOPUS:79951892443

SN - 9781424453689

T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

SP - 534

EP - 535

BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Y2 - 7 November 2010 through 11 November 2010

ER -

Growths of lattice-matched AlInN / GaN for optoelectronics applications

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this