@inproceedings{90e2934d80724692bc27ecc188222722,
title = "Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile",
abstract = "The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.",
author = "Hongping Zhao and Guangyu Liu and Xiaohang Li and Huang, {G. S.} and {Tafon Penn}, S. and Volkmar Dierolf and Nelson Tansu",
year = "2009",
language = "English (US)",
isbn = "9781557528698",
series = "Optics InfoBase Conference Papers",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",
note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",
}