@inproceedings{bf596f0370fb412f81df9d5c12f40500,
title = "Heteroepitaxy and annealing studies of orthorhombic gallium oxide films on nanostructured AlN templates",
abstract = "We report on the growth and characterization of κ-Ga2O3 films grown at varying temperatures in the range of 450-700 °C by mist-CVD. All of the films are single-crystalline and phase-pure except for the two samples grown at 550 °C and 600 °C, which have (2̅01)-oriented β-Ga2O3 incorporated in them. Unlike the phase-pure films which exhibit hexagonal-shaped grains, the mixed-phase samples have rough and partially coalesced films with irregular-shaped grains due to the presence of two Ga2O3 phases growing along two different crystallographic orientations. Moreover, we found that annealing the κ-Ga2O3 films at 700 °C in ambient air led to improved crystalline quality and reduced grain size.",
author = "Yara Banda and Cho, {Seong Ho} and Yanqing Jia and Hassine, {Mohamed Ben} and Bambar Davaasuren and Qingxiao Wang and Bae, {Si Young} and Ng, {Tien Khee} and Ooi, {Boon S.}",
note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; Oxide-Based Materials and Devices XV 2024 ; Conference date: 29-01-2024 Through 01-02-2024",
year = "2024",
doi = "10.1117/12.3001597",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Rogers, {David J.} and Teherani, {Ferechteh H.}",
booktitle = "Oxide-Based Materials and Devices XV",
address = "United States",
}