Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

Rosalyn Koscica; Yating Wan; William He; M. J. Kennedy; John E. Bowers

doi:10.1364/OL.486089

Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

Rosalyn Koscica, Yating Wan^*, William He, M. J. Kennedy, John E. Bowers

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T₀ of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.

Original language	English (US)
Pages (from-to)	2539-2542
Number of pages	4
Journal	Optics Letters
Volume	48
Issue number	10
DOIs	https://doi.org/10.1364/OL.486089
State	Published - May 15 2023

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide",

abstract = "Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T0 of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.",

author = "Rosalyn Koscica and Yating Wan and William He and Kennedy, {M. J.} and Bowers, {John E.}",

note = "Funding Information: A portion of this work was performed in the UCSB Nanofabrication Facility. We thank Lin Chang for providing the SiC substrates and Mario Dumont for helpful discussion. Publisher Copyright: {\textcopyright} 2023 Optica Publishing Group.",

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doi = "10.1364/OL.486089",

language = "English (US)",

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T1 - Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

AU - Koscica, Rosalyn

AU - Wan, Yating

AU - He, William

AU - Kennedy, M. J.

AU - Bowers, John E.

N1 - Funding Information: A portion of this work was performed in the UCSB Nanofabrication Facility. We thank Lin Chang for providing the SiC substrates and Mario Dumont for helpful discussion. Publisher Copyright: © 2023 Optica Publishing Group.

PY - 2023/5/15

Y1 - 2023/5/15

N2 - Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T0 of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.

AB - Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III-V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III-V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates with high temperature stability. A large T0 of 221 K with a relatively temperature-insensitive operation occurs near room temperature, while lasing is sustained up to 105°C. The SiC platform presents a unique and ideal candidate for realizing monolithic integration of optoelectronics, quantum, and nonlinear photonics.

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DO - 10.1364/OL.486089

M3 - Article

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SN - 0146-9592

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EP - 2542

JO - Optics Letters

JF - Optics Letters

IS - 10

ER -

Heterogeneous integration of a III-V quantum dot laser on high thermal conductivity silicon carbide

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