Abstract
We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.
Original language | English (US) |
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Article number | 045011 |
Journal | AIP ADVANCES |
Volume | 13 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2023 |
ASJC Scopus subject areas
- General Physics and Astronomy