High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates

Pavel Kirilenko; Mohammed A. Najmi; Bei Ma; Artem Shushanian; Martin Velazquez-Rizo; Daisuke Iida; Kazuhiro Ohkawa

doi:10.1063/5.0136205

High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO₄substrates

Pavel Kirilenko, Mohammed A. Najmi, Bei Ma, Artem Shushanian, Martin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.

Original language	English (US)
Article number	045011
Journal	AIP ADVANCES
Volume	13
Issue number	4
DOIs	https://doi.org/10.1063/5.0136205
State	Published - Apr 1 2023

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/5.0136205

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@article{09b992deb7f54a2baeb9796e1b618114,

title = "High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates",

abstract = "We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (000{\=2}) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.",

author = "Pavel Kirilenko and Najmi, {Mohammed A.} and Bei Ma and Artem Shushanian and Martin Velazquez-Rizo and Daisuke Iida and Kazuhiro Ohkawa",

note = "Funding Information: This publication is based upon work supported by King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676-01-01). The sample characterization in this work was supported by the Imaging and Characterization Core Lab and the Analytical Chemistry Core Lab of the King Abdullah University of Science and Technology. Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = apr,

day = "1",

doi = "10.1063/5.0136205",

language = "English (US)",

volume = "13",

journal = "AIP ADVANCES",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates

AU - Kirilenko, Pavel

AU - Najmi, Mohammed A.

AU - Ma, Bei

AU - Shushanian, Artem

AU - Velazquez-Rizo, Martin

AU - Iida, Daisuke

AU - Ohkawa, Kazuhiro

N1 - Funding Information: This publication is based upon work supported by King Abdullah University of Science and Technology (KAUST) Research Funding (KRF) (Award Nos. ORA-2022-5313 and BAS/1/1676-01-01). The sample characterization in this work was supported by the Imaging and Characterization Core Lab and the Analytical Chemistry Core Lab of the King Abdullah University of Science and Technology. Publisher Copyright: © 2023 Author(s).

PY - 2023/4/1

Y1 - 2023/4/1

N2 - We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.

AB - We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85152921528&partnerID=8YFLogxK

U2 - 10.1063/5.0136205

DO - 10.1063/5.0136205

M3 - Article

AN - SCOPUS:85152921528

SN - 2158-3226

VL - 13

JO - AIP ADVANCES

JF - AIP ADVANCES

IS - 4

M1 - 045011

ER -

High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO₄substrates

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