High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates

Pavel Kirilenko, Mohammed A. Najmi, Bei Ma, Artem Shushanian, Martin Velazquez-Rizo, Daisuke Iida, Kazuhiro Ohkawa*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10-1-2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm-2 in the case of screw-type and edge-type dislocations, respectively.

Original languageEnglish (US)
Article number045011
JournalAIP ADVANCES
Volume13
Issue number4
DOIs
StatePublished - Apr 1 2023

ASJC Scopus subject areas

  • General Physics and Astronomy

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