High-efficiency InGaN red micro-LEDs for visible light communication

Yu-Ming Huang; Chun-Yen Peng; Wen-Chien Miao; Hsin Chiang; Tzu-Yi Lee; Yun-Han Chang; Konthoujam James Singh; Daisuke Iida; Ray-Hua Horng; Chi-Wai Chow; Chien-Chung Lin; Kazuhiro Ohkawa; Shih-Chen Chen; Hao-Chung Kuo

doi:10.1364/prj.462050

High-efficiency InGaN red micro-LEDs for visible light communication

Yu-Ming Huang, Chun-Yen Peng, Wen-Chien Miao, Hsin Chiang, Tzu-Yi Lee, Yun-Han Chang, Konthoujam James Singh, Daisuke Iida, Ray-Hua Horng, Chi-Wai Chow, Chien-Chung Lin, Kazuhiro Ohkawa, Shih-Chen Chen, Hao-Chung Kuo

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Abstract

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

Original language	English (US)
Pages (from-to)	1978
Journal	Photonics Research
Volume	10
Issue number	8
DOIs	https://doi.org/10.1364/prj.462050
State	Published - Jul 28 2022

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/prj.462050

https://repository.kaust.edu.sa/bitstream/10754/680199/1/234%20revised%20manuscript%20_%2020220616.pdf

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@article{e04de01a704c40de9e629a482768f80c,

title = "High-efficiency InGaN red micro-LEDs for visible light communication",

abstract = "In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.",

author = "Yu-Ming Huang and Chun-Yen Peng and Wen-Chien Miao and Hsin Chiang and Tzu-Yi Lee and Yun-Han Chang and Singh, {Konthoujam James} and Daisuke Iida and Ray-Hua Horng and Chi-Wai Chow and Chien-Chung Lin and Kazuhiro Ohkawa and Shih-Chen Chen and Hao-Chung Kuo",

note = "KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: Ministry of Science and Technology, Taiwan (110-2124-M-A49-003-, 108-2221-E-009-113-MY3). The authors thank Wei-Bin Lee from the Hon Hai Research Institute for helpful discussions.",

year = "2022",

month = jul,

day = "28",

doi = "10.1364/prj.462050",

language = "English (US)",

volume = "10",

pages = "1978",

journal = "Photonics Research",

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number = "8",

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TY - JOUR

T1 - High-efficiency InGaN red micro-LEDs for visible light communication

AU - Huang, Yu-Ming

AU - Peng, Chun-Yen

AU - Miao, Wen-Chien

AU - Chiang, Hsin

AU - Lee, Tzu-Yi

AU - Chang, Yun-Han

AU - Singh, Konthoujam James

AU - Iida, Daisuke

AU - Horng, Ray-Hua

AU - Chow, Chi-Wai

AU - Lin, Chien-Chung

AU - Ohkawa, Kazuhiro

AU - Chen, Shih-Chen

AU - Kuo, Hao-Chung

N1 - KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: Ministry of Science and Technology, Taiwan (110-2124-M-A49-003-, 108-2221-E-009-113-MY3). The authors thank Wei-Bin Lee from the Hon Hai Research Institute for helpful discussions.

PY - 2022/7/28

Y1 - 2022/7/28

N2 - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

AB - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

UR - http://hdl.handle.net/10754/680199

UR - https://opg.optica.org/abstract.cfm?URI=prj-10-8-1978

U2 - 10.1364/prj.462050

DO - 10.1364/prj.462050

M3 - Article

SN - 2327-9125

VL - 10

SP - 1978

JO - Photonics Research

JF - Photonics Research

IS - 8

ER -

High-efficiency InGaN red micro-LEDs for visible light communication

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