Engineering
Continuous Wave
100%
Current Threshold
100%
High Efficiency
100%
Room Temperature
66%
Gallium Arsenide
66%
Si Substrate
33%
Measurement
33%
Threading Dislocation
33%
Output Power
33%
Dislocation Density
33%
Threshold Current Density
33%
Channelings
33%
Ground State
33%
Plug Efficiency
33%
Demonstrates
33%
Imaging Contrast
33%
Applications
33%
High Quality
33%
Coating
33%
Fabry Perot
33%
Low Value
33%
Side Output
33%
INIS
lasers
100%
efficiency
100%
quantum dots
100%
threshold current
100%
indium arsenides
100%
gallium arsenides
33%
temperature range 0273-0400 k
33%
applications
16%
walls
16%
coatings
16%
power
16%
values
16%
substrates
16%
output
16%
density
16%
dislocations
16%
epitaxy
16%
molecular beam epitaxy
16%
current density
16%
reflectivity
16%
ground states
16%
plugs
16%
electron channeling
16%
Physics
Laser
100%
Continuous Radiation
50%
Room Temperature
33%
Molecular Beam Epitaxy
16%
Lasing
16%
Ground State
16%
Flat Surfaces
16%
Plugs
16%
Utilization
16%
Contrast
16%
Substrates
16%
Value
16%
Sides
16%
Output
16%
Quality
16%
Coating
16%
Material Science
Laser
100%
Quantum Dot
100%
Density
33%
Temperature
33%
Reflectivity
16%
Molecular Beam Epitaxy
16%
Coating
16%
Dislocation
16%