High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

Kebin Li; Yihong Wu; Jinjun Qiu; Guchang Han; Zaibing Guo; Towchong Chong

doi:10.1016/S0304-8853(01)00935-0

High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

Kebin Li^*, Yihong Wu, Jinjun Qiu, Guchang Han, Zaibing Guo, Towchong Chong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high V_h at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.

Original language	English (US)
Pages (from-to)	89-95
Number of pages	7
Journal	Journal of Magnetism and Magnetic Materials
Volume	241
Issue number	1
DOIs	https://doi.org/10.1016/S0304-8853(01)00935-0
State	Published - Jan 1 2002

Keywords

Giant magnetoresistance
Magnetic tunneling junctions
Magnetism
Multiyers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(01)00935-0

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title = "High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering",

abstract = "High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high Vh at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.",

keywords = "Giant magnetoresistance, Magnetic tunneling junctions, Magnetism, Multiyers",

author = "Kebin Li and Yihong Wu and Jinjun Qiu and Guchang Han and Zaibing Guo and Towchong Chong",

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T1 - High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

AU - Li, Kebin

AU - Wu, Yihong

AU - Qiu, Jinjun

AU - Han, Guchang

AU - Guo, Zaibing

AU - Chong, Towchong

PY - 2002/1/1

Y1 - 2002/1/1

N2 - High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high Vh at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.

AB - High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high Vh at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.

KW - Giant magnetoresistance

KW - Magnetic tunneling junctions

KW - Magnetism

KW - Multiyers

UR - http://www.scopus.com/inward/record.url?scp=0036504465&partnerID=8YFLogxK

U2 - 10.1016/S0304-8853(01)00935-0

DO - 10.1016/S0304-8853(01)00935-0

M3 - Article

AN - SCOPUS:0036504465

SN - 0304-8853

VL - 241

SP - 89

EP - 95

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

Abstract

Keywords

ASJC Scopus subject areas

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