High-field sensitive magnetic tunneling junctions fabricated by inductively coupled plasma sputtering

Kebin Li*, Yihong Wu, Jinjun Qiu, Guchang Han, Zaibing Guo, Towchong Chong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

High tunneling magnetoresistance ratios (TMR) were observed at room temperature on magnetic tunneling junctions (MTJ) fabricated by inductively coupled plasma sputtering. Using soft ferromagnetic electrode, high field sensitivity up to 6.1%/Oe was achieved in the MTJs having dimensions of 120 μm × 120 μm. Small ferromagnetic coupling field (11Oe) between the top and bottom ferromagnetic electrodes, high Vh at which the TMR ratio decreases to 50% of its initial value, high breakdown electric field were obtained.

Original languageEnglish (US)
Pages (from-to)89-95
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Volume241
Issue number1
DOIs
StatePublished - Mar 2002
Externally publishedYes

Keywords

  • Giant magnetoresistance
  • Magnetic tunneling junctions
  • Magnetism
  • Multiyers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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