High-gain phototransistors based on a CVD MoS2 monolayer

Wenjing Zhang; Jing Kai Huang; Chang Hsiao Chen; Yung Huang Chang; Yuh Jen Cheng; Lain Jong Li

doi:10.1002/adma.201301244

High-gain phototransistors based on a CVD MoS₂ monolayer

Wenjing Zhang, Jing Kai Huang, Chang Hsiao Chen, Yung Huang Chang, Yuh Jen Cheng, Lain Jong Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

949 Scopus citations

Abstract

A phototransistor based on a chemical vapor deposited (CVD) MoS₂ monolayer exhibits a high photoresponsivity (2200 A W^-1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS ₂, decreasing the carrier mobility, photoresponsivity, and photogain.

Original language	English (US)
Pages (from-to)	3456-3461
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	25
DOIs	https://doi.org/10.1002/adma.201301244
State	Published - Jul 5 2013
Externally published	Yes

Keywords

ambient air
molybdenum disulfides
photogain
phototransistors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201301244

Cite this

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abstract = "A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W-1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS 2, decreasing the carrier mobility, photoresponsivity, and photogain.",

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