@inproceedings{37699c88940f4946a2880e7688bc15e5,
title = "High gain semiconductor optical amplifier — Laser diode at visible wavelength",
abstract = "We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.",
author = "Chao Shen and Changmin Lee and Ng, {Tien Khee} and Shuji Nakamura and Speck, {James S.} and DenBaars, {Steven P.} and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Ooi, {Boon S.}",
note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors gratefully acknowledge the funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), KACST-KAUST-UCSB Solid-State Lighting Program, and King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01).",
year = "2017",
month = feb,
day = "7",
doi = "10.1109/IEDM.2016.7838473",
language = "English (US)",
isbn = "9781509039029",
pages = "22.4.1--22.4.4",
booktitle = "2016 IEEE International Electron Devices Meeting (IEDM)",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
}