TY - GEN
T1 - High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures
AU - Bayerl, A.
AU - Iglesias, V.
AU - Lanza, M.
AU - Porti, M.
AU - Nafria, M.
AU - Aymerich, X.
N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16
PY - 2011/5/12
Y1 - 2011/5/12
N2 - High-k dielectrics have been introduced in MOS devices to reduce gate leakage currents. However, their polycrystallization during a thermal annealing can affect the electrical properties and reliability of scaled devices. In this work, a Conductive Atomic Force Microscope (CAFM) has been combined with standard electrical characterization techniques at wafer level to investigate (I.) how the polycrystallization of a high-k layer affects its nanoscale morphological and electrical properties and (II.) how such nanoscale properties affect the electrical characteristics of fully processed devices. The impact of an electrical stress on the electrical conduction and charge trapping of amorphous and polycrystalline high-k layers has been also analyzed. © 2011 IEEE.
AB - High-k dielectrics have been introduced in MOS devices to reduce gate leakage currents. However, their polycrystallization during a thermal annealing can affect the electrical properties and reliability of scaled devices. In this work, a Conductive Atomic Force Microscope (CAFM) has been combined with standard electrical characterization techniques at wafer level to investigate (I.) how the polycrystallization of a high-k layer affects its nanoscale morphological and electrical properties and (II.) how such nanoscale properties affect the electrical characteristics of fully processed devices. The impact of an electrical stress on the electrical conduction and charge trapping of amorphous and polycrystalline high-k layers has been also analyzed. © 2011 IEEE.
UR - http://ieeexplore.ieee.org/document/5744226/
UR - http://www.scopus.com/inward/record.url?scp=79955735071&partnerID=8YFLogxK
U2 - 10.1109/SCED.2011.5744226
DO - 10.1109/SCED.2011.5744226
M3 - Conference contribution
SN - 9781424478637
BT - Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
ER -