Abstract
(Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.
Original language | English (US) |
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Pages (from-to) | 2371-2375 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 21 |
DOIs | |
State | Published - Jun 4 2010 |
Externally published | Yes |
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- General Materials Science