High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Mohamad Insan Nugraha; Roger Häusermann; Satria Zulkarnaen Bisri; Hiroyuki Matsui; Mykhailo Sytnyk; Wolfgang Heiss; Jun Takeya; Maria Antonietta Loi

doi:10.1002/adma.201404495

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Mohamad Insan Nugraha, Roger Häusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolfgang Heiss, Jun Takeya^*, Maria Antonietta Loi

^*Corresponding author for this work

KAUST Solar Center

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Dual-gated PbS nanocrystal field-effect transistors employing SiO₂ and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm² V^-1 s^-1) and the high on/off ratio (10⁵-10⁶), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

Original language	English (US)
Pages (from-to)	2107-2112
Number of pages	6
Journal	Advanced Materials
Volume	27
Issue number	12
DOIs	https://doi.org/10.1002/adma.201404495
State	Published - Mar 25 2015

Keywords

ambipolar transistors
colloidal nanocrystals
density of trap states
field effect transistors

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors",

abstract = "Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V-1 s-1) and the high on/off ratio (105-106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.",

keywords = "ambipolar transistors, colloidal nanocrystals, density of trap states, field effect transistors",

author = "Nugraha, {Mohamad Insan} and Roger H{\"a}usermann and Bisri, {Satria Zulkarnaen} and Hiroyuki Matsui and Mykhailo Sytnyk and Wolfgang Heiss and Jun Takeya and Loi, {Maria Antonietta}",

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doi = "10.1002/adma.201404495",

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T1 - High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

AU - Nugraha, Mohamad Insan

AU - Häusermann, Roger

AU - Bisri, Satria Zulkarnaen

AU - Matsui, Hiroyuki

AU - Sytnyk, Mykhailo

AU - Heiss, Wolfgang

AU - Takeya, Jun

AU - Loi, Maria Antonietta

PY - 2015/3/25

Y1 - 2015/3/25

N2 - Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V-1 s-1) and the high on/off ratio (105-106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

AB - Dual-gated PbS nanocrystal field-effect transistors employing SiO2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm2 V-1 s-1) and the high on/off ratio (105-106), show that the controlled nanocrystal assembly (obtained with self-assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.

KW - ambipolar transistors

KW - colloidal nanocrystals

KW - density of trap states

KW - field effect transistors

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U2 - 10.1002/adma.201404495

DO - 10.1002/adma.201404495

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VL - 27

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EP - 2112

JO - Advanced Materials

JF - Advanced Materials

IS - 12

ER -

High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors

Abstract

Keywords

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