High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Amit Tewari, Srinivas Gandla, Anil Reddy Pininti, K. Karuppasamy, Siva Böhm, Arup R. Bhattacharyya, Christopher R. McNeill, Dipti Gupta*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan ®SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of-1.4V (operating voltage: 0to-4V) together with a mobility of 1.9cm2 V-1s-1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (κ∼20.02), a low interfacial trap density (2.56 × 1011cm-2), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234nm.

Original languageEnglish (US)
Article number103302
JournalApplied Physics Letters
Volume107
Issue number10
DOIs
StatePublished - Sep 7 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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