Abstract
Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V-1 s-1.
Original language | English (US) |
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Pages (from-to) | 1894-1898 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 23 |
Issue number | 16 |
DOIs | |
State | Published - Apr 26 2011 |
Externally published | Yes |
Keywords
- ZnO
- high-k dielectrics
- oxide transistors
- spray pyrolysis
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering