High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Safdar Nazir; Udo Schwingenschlögl; M. Upadhyay Kahaly

doi:10.1063/1.4719106

High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Safdar Nazir, Udo Schwingenschlögl, M. Upadhyay Kahaly

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

Original language	English (US)
Pages (from-to)	201607
Journal	Applied Physics Letters
Volume	100
Issue number	20
DOIs	https://doi.org/10.1063/1.4719106
State	Published - May 20 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4719106

https://repository.kaust.edu.sa/bitstream/10754/314531/1/High%20mobility%20of%20the%20strongly%20confined%20hole%20gas%20in%20AgTaO3%20SrTiO3.pdf

Cite this

@article{cb0aa23a50694d8da2c667db45613522,

title = "High mobility of the strongly confined hole gas in AgTaO3/SrTiO3",

abstract = "A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9{\AA}) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.",

author = "Safdar Nazir and Udo Schwingenschl{\"o}gl and {Upadhyay Kahaly}, M.",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2012",

month = may,

day = "20",

doi = "10.1063/1.4719106",

language = "English (US)",

volume = "100",

pages = "201607",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

AU - Nazir, Safdar

AU - Schwingenschlögl, Udo

AU - Upadhyay Kahaly, M.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/5/20

Y1 - 2012/5/20

N2 - A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

AB - A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm−2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.

UR - http://hdl.handle.net/10754/314531

UR - http://scitation.aip.org/content/aip/journal/apl/100/20/10.1063/1.4719106

UR - http://www.scopus.com/inward/record.url?scp=84861827673&partnerID=8YFLogxK

U2 - 10.1063/1.4719106

DO - 10.1063/1.4719106

M3 - Article

SN - 0003-6951

VL - 100

SP - 201607

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

High mobility of the strongly confined hole gas in AgTaO3/SrTiO3

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this