TY - JOUR
T1 - High-Performance 1.55-µm Superluminescent Diode Based on Broad Gain InAs/InGaAlAs/InP Quantum Dash Active Region
AU - Khan, Mohammed Zahed Mustafa
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2014/8
Y1 - 2014/8
N2 - We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of
AB - We report on the high-performance characteristics from superluminescent diodes (SLDs) based on four-stack InAs/InGaAlAs chirped-barrier thickness quantum dash (Qdash) in a well structure. The active region exhibits a measured broad gain spectrum of 140 nm, with a peak modal gain of ~41 cm-1. The noncoated two-section gainabsorber broad-area and ridge-waveguide device configuration exhibits an output power of > 20 mW and > 12 mW, respectively. The corresponding -3-dB bandwidths span ~82 nm and ~72 nm, with a small spectral ripple of
UR - http://hdl.handle.net/10754/528238
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6851845
UR - http://www.scopus.com/inward/record.url?scp=84923879720&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2014.2337892
DO - 10.1109/JPHOT.2014.2337892
M3 - Article
SN - 1943-0655
VL - 6
SP - 1
EP - 8
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 4
ER -