High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

Daehwan Jung, Robert Herrick, Justin Norman, Yating Wan, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and 65,000 hours at 60°C.
Original languageEnglish (US)
Title of host publication23rd Opto-Electronics and Communications Conference, OECC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538691458
DOIs
StatePublished - Jul 1 2018
Externally publishedYes

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