High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Iman S. Roqan; Norah Alwadai; Somak Mitra; Hadeel Amoudi

doi:10.1109/EDTM53872.2022.9798339

High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Iman S. Roqan^*, Norah Alwadai, Somak Mitra, Hadeel Amoudi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.

Original language	English (US)
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	185-187
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798339
State	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: Mar 6 2022 → Mar 9 2022

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	03/6/22 → 03/9/22

Keywords

deep UV
nanoparticles-based devices
photodiode

ASJC Scopus subject areas

Process Chemistry and Technology
Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM53872.2022.9798339

Cite this

Roqan, I. S., Alwadai, N., Mitra, S., & Amoudi, H. (2022). High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 185-187). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798339

Roqan, Iman S. ; Alwadai, Norah ; Mitra, Somak et al. / High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 185-187 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

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title = "High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays",

abstract = "The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.",

keywords = "deep UV, nanoparticles-based devices, photodiode",

author = "Roqan, {Iman S.} and Norah Alwadai and Somak Mitra and Hadeel Amoudi",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798339",

language = "English (US)",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "185--187",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

address = "United States",

}

Roqan, IS, Alwadai, N, Mitra, S & Amoudi, H 2022, High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 185-187, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 03/6/22. https://doi.org/10.1109/EDTM53872.2022.9798339

High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays. / Roqan, Iman S.; Alwadai, Norah; Mitra, Somak et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 185-187 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

AU - Roqan, Iman S.

AU - Alwadai, Norah

AU - Mitra, Somak

AU - Amoudi, Hadeel

PY - 2022

Y1 - 2022

N2 - The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.

AB - The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.

KW - deep UV

KW - nanoparticles-based devices

KW - photodiode

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DO - 10.1109/EDTM53872.2022.9798339

M3 - Conference contribution

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T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 185

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BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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Roqan IS, Alwadai N, Mitra S, Amoudi H. High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 185-187. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798339

High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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