TY - JOUR
T1 - High-Performance Field-Effect Transistors Based on αP and βP
AU - Montes Muñoz, Enrique
AU - Schwingenschlögl, Udo
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
PY - 2019/3/25
Y1 - 2019/3/25
N2 - The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.
AB - The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction-free field-effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first-principles calculations and the nonequilibrium Green's function method, the proposed field-effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.
UR - http://hdl.handle.net/10754/652985
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201807810
UR - http://www.scopus.com/inward/record.url?scp=85063411087&partnerID=8YFLogxK
U2 - 10.1002/adma.201807810
DO - 10.1002/adma.201807810
M3 - Article
C2 - 30907472
SN - 0935-9648
VL - 31
SP - 1807810
JO - Advanced Materials
JF - Advanced Materials
IS - 18
ER -