High-performance hetero-junction crystalline silicon photovoltaic technology

J. Levrat; C. Allebé; N. Badel; L. Barraud; M. Bonnet-Eymard; J. Champliaud; F. Debrot; A. Descoeudres; A. Faes; A. Lachowicz; S. Nicolay; L. Sansonnens; C. Ballif; J. Geissbühler; S. De Wolf; M. Despeisse

doi:10.1109/PVSC.2014.6925134

High-performance hetero-junction crystalline silicon photovoltaic technology

J. Levrat, C. Allebé, N. Badel, L. Barraud, M. Bonnet-Eymard, J. Champliaud, F. Debrot, A. Descoeudres, A. Faes, A. Lachowicz, S. Nicolay, L. Sansonnens, C. Ballif, J. Geissbühler, S. De Wolf, M. Despeisse

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

Silicon heterojunction solar cell technology (HJT) takes advantage of ultra-thin amorphous silicon layers deposited on both sides of monocrystalline silicon wafers, enabling excellent silicon wafer surface passivation resulting in high device power output and in addition to efficient use of thin wafers. A full cell processing platform was developed in our laboratory, enabling to achieve > 22 % cell efficiency. Advanced concepts for metallization and interconnection are under study, from fine-line printing combined with SmartWire interconnection to Copper plating. Importantly, we show that the HJT technology intrinsically enables high bifaciality of the cells (> 95 %), and further demonstrates a low thermal coefficient (< 0.2 - 0.3 %/°C). The high performance of heterojunction cells and SmartWire interconnection based modules allow for very low cost of electricity for Heterojunction based solar systems, with a potential below 6 Euro cents per kWh in Europe, bringing photovoltaics as a very competitive electricity source. It further provides upgrade potential towards 24 % cell efficiency.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1218-1222
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925134
State	Published - Oct 15 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	06/8/14 → 06/13/14

Keywords

Grid
SmartWire
amorphous materials
cell interconnection
effective optical width
hetero-junction
metallization
passivation
photovoltaic cells
silicon

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6925134

Cite this

Levrat, J., Allebé, C., Badel, N., Barraud, L., Bonnet-Eymard, M., Champliaud, J., Debrot, F., Descoeudres, A., Faes, A., Lachowicz, A., Nicolay, S., Sansonnens, L., Ballif, C., Geissbühler, J., De Wolf, S., & Despeisse, M. (2014). High-performance hetero-junction crystalline silicon photovoltaic technology. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1218-1222). Article 6925134 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925134

@inproceedings{aa593939133b493c87319ab2f38ed928,

title = "High-performance hetero-junction crystalline silicon photovoltaic technology",

abstract = "Silicon heterojunction solar cell technology (HJT) takes advantage of ultra-thin amorphous silicon layers deposited on both sides of monocrystalline silicon wafers, enabling excellent silicon wafer surface passivation resulting in high device power output and in addition to efficient use of thin wafers. A full cell processing platform was developed in our laboratory, enabling to achieve > 22 % cell efficiency. Advanced concepts for metallization and interconnection are under study, from fine-line printing combined with SmartWire interconnection to Copper plating. Importantly, we show that the HJT technology intrinsically enables high bifaciality of the cells (> 95 %), and further demonstrates a low thermal coefficient (< 0.2 - 0.3 %/°C). The high performance of heterojunction cells and SmartWire interconnection based modules allow for very low cost of electricity for Heterojunction based solar systems, with a potential below 6 Euro cents per kWh in Europe, bringing photovoltaics as a very competitive electricity source. It further provides upgrade potential towards 24 % cell efficiency.",

keywords = "Grid, SmartWire, amorphous materials, cell interconnection, effective optical width, hetero-junction, metallization, passivation, photovoltaic cells, silicon",

author = "J. Levrat and C. Alleb{\'e} and N. Badel and L. Barraud and M. Bonnet-Eymard and J. Champliaud and F. Debrot and A. Descoeudres and A. Faes and A. Lachowicz and S. Nicolay and L. Sansonnens and C. Ballif and J. Geissb{\"u}hler and {De Wolf}, S. and M. Despeisse",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925134",

language = "English (US)",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1218--1222",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

address = "United States",

}

Levrat, J, Allebé, C, Badel, N, Barraud, L, Bonnet-Eymard, M, Champliaud, J, Debrot, F, Descoeudres, A, Faes, A, Lachowicz, A, Nicolay, S, Sansonnens, L, Ballif, C, Geissbühler, J, De Wolf, S & Despeisse, M 2014, High-performance hetero-junction crystalline silicon photovoltaic technology. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925134, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1218-1222, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 06/8/14. https://doi.org/10.1109/PVSC.2014.6925134

High-performance hetero-junction crystalline silicon photovoltaic technology. / Levrat, J.; Allebé, C.; Badel, N. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1218-1222 6925134 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-performance hetero-junction crystalline silicon photovoltaic technology

AU - Levrat, J.

AU - Allebé, C.

AU - Badel, N.

AU - Barraud, L.

AU - Bonnet-Eymard, M.

AU - Champliaud, J.

AU - Debrot, F.

AU - Descoeudres, A.

AU - Faes, A.

AU - Lachowicz, A.

AU - Nicolay, S.

AU - Sansonnens, L.

AU - Ballif, C.

AU - Geissbühler, J.

AU - De Wolf, S.

AU - Despeisse, M.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Silicon heterojunction solar cell technology (HJT) takes advantage of ultra-thin amorphous silicon layers deposited on both sides of monocrystalline silicon wafers, enabling excellent silicon wafer surface passivation resulting in high device power output and in addition to efficient use of thin wafers. A full cell processing platform was developed in our laboratory, enabling to achieve > 22 % cell efficiency. Advanced concepts for metallization and interconnection are under study, from fine-line printing combined with SmartWire interconnection to Copper plating. Importantly, we show that the HJT technology intrinsically enables high bifaciality of the cells (> 95 %), and further demonstrates a low thermal coefficient (< 0.2 - 0.3 %/°C). The high performance of heterojunction cells and SmartWire interconnection based modules allow for very low cost of electricity for Heterojunction based solar systems, with a potential below 6 Euro cents per kWh in Europe, bringing photovoltaics as a very competitive electricity source. It further provides upgrade potential towards 24 % cell efficiency.

AB - Silicon heterojunction solar cell technology (HJT) takes advantage of ultra-thin amorphous silicon layers deposited on both sides of monocrystalline silicon wafers, enabling excellent silicon wafer surface passivation resulting in high device power output and in addition to efficient use of thin wafers. A full cell processing platform was developed in our laboratory, enabling to achieve > 22 % cell efficiency. Advanced concepts for metallization and interconnection are under study, from fine-line printing combined with SmartWire interconnection to Copper plating. Importantly, we show that the HJT technology intrinsically enables high bifaciality of the cells (> 95 %), and further demonstrates a low thermal coefficient (< 0.2 - 0.3 %/°C). The high performance of heterojunction cells and SmartWire interconnection based modules allow for very low cost of electricity for Heterojunction based solar systems, with a potential below 6 Euro cents per kWh in Europe, bringing photovoltaics as a very competitive electricity source. It further provides upgrade potential towards 24 % cell efficiency.

KW - Grid

KW - SmartWire

KW - amorphous materials

KW - cell interconnection

KW - effective optical width

KW - hetero-junction

KW - metallization

KW - passivation

KW - photovoltaic cells

KW - silicon

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U2 - 10.1109/PVSC.2014.6925134

DO - 10.1109/PVSC.2014.6925134

M3 - Conference contribution

AN - SCOPUS:84912144654

T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 1218

EP - 1222

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Levrat J, Allebé C, Badel N, Barraud L, Bonnet-Eymard M, Champliaud J et al. High-performance hetero-junction crystalline silicon photovoltaic technology. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1218-1222. 6925134. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925134

High-performance hetero-junction crystalline silicon photovoltaic technology

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

UN SDGs

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