High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Pradipta K. Nayak; Mohamed N. Hedhili; Dong Kyu Cha; Husam N. Alshareef

doi:10.1063/1.4816060

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Pradipta K. Nayak, Mohamed N. Hedhili, Dong Kyu Cha, Husam N. Alshareef

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183 Scopus citations

Abstract

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

Original language	English (US)
Pages (from-to)	033518
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4816060
State	Published - Jul 18 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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https://repository.kaust.edu.sa/bitstream/10754/552320/1/1.4816060.pdf

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title = "High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric",

abstract = "We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.",

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AU - Nayak, Pradipta K.

AU - Hedhili, Mohamed N.

AU - Cha, Dong Kyu

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/7/18

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N2 - We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

AB - We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

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JO - Applied Physics Letters

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High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

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