High Performance InAs/In0.53Ga0.23Al0.24As/InP Quantum Dot 1.55 um Tunnel Injection Laser

Keyphrases

• Injection Lasers 100%
• Tunneling Injection 100%
• C(T) 100%
• InAs Quantum Dots 100%
• Light-current Characteristics 50%
• Light Current 50%
• Gain Compression 50%
• Laser Heterostructures 50%
• Current Signal 50%
• Electron Injection 50%
• Edge-emitting Semiconductor Laser 50%
• Small-signal Modulation Bandwidth 50%
• InP Substrate 50%
• Modulation Doping 50%
• Compression Factor 50%
• Small Signal Modulation 50%
• Quantum Dot Lasers 50%
• Modal Gain 50%

Engineering

• Signal Modulation 100%
• Quantum Dot 100%
• Modulation Frequency 50%
• Heterostructures 50%
• Gain Region 50%
• Dot Layer 50%
• Laser Emission 50%
• Differential Gain 50%
• Gain Compression 50%
• Compression Factor 50%

Physics

• Injection Laser 100%
• Signal Modulation 100%
• Quantum Dot 100%
• Semiconductor Laser 50%
• Frequency Modulation 50%
• Molecular Beam Epitaxy 50%
• Modulation Doping 50%