High-performance mode-locked lasers on silicon

Songtao Liu, Xinru Wu, Justin Norman, Daehwan Jung, Mario Dumont, Chen Shang, Yating Wan, M. J. Kennedy, Bozhang Dong, Dominik Auth, Stefan Breuer, Frédéric Grillot, Weng Chow, Arthur Gossard, John Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


In this paper we review our recent progress on high performance mode locked InAs quantum dot lasers that are directly grown on CMOS compatible silicon substrates by solid-source molecular beam epitaxy. Different mode locking configurations are designed and fabricated. The lasers operate within the O-band wavelength range, showing pulsewidth down to 490 fs, RF linewidth down to 400 Hz, and pulse-to-pulse timing jitter down to 6 fs. When the laser is used as a comb source for wavelength division multiplexing transmission systems, 4.1 terabit per second transmission capacity was achieved. Self-mode locking is also investigated both experimentally and theoretically. The demonstrated performance makes those lasers promising light source candidates for future large-scale silicon electronic and photonic integrated circuits (EPICs) with multiple functionalities.
Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
ISBN (Print)9781510633117
StatePublished - Jan 1 2020
Externally publishedYes


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