High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram; P. Majhi; G. Sun; P. Kalra; H. R. Harris; K. J. Choi; D. Heh; J. Oh; D. Kelly; R. Choi; B. J. Cho; M. M. Hussain; C. Smith; S. Banerjee; W. Tsai; S. E. Thompson; H. H. Tseng; R. Jammy

doi:10.1109/IEDM.2007.4419049

High performance pMOSFETs using Si/Si_1-xGe_x/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

S. Suthram^*, P. Majhi, G. Sun, P. Kalra, H. R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, M. M. Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. H. Tseng, R. Jammy

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

Original language	English (US)
Article number	4419049
Pages (from-to)	727-730
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419049
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2007.4419049

Cite this

Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H. R., Choi, K. J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B. J., Hussain, M. M., Smith, C., Banerjee, S., Tsai, W., Thompson, S. E., Tseng, H. H., & Jammy, R. (2007). High performance pMOSFETs using Si/Si_1-xGe_x/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. Technical Digest - International Electron Devices Meeting, IEDM, 727-730. Article 4419049. https://doi.org/10.1109/IEDM.2007.4419049

@article{228189f5ee9d4b4ea2742a3926a6adb8,

title = "High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node",

abstract = "We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.",

author = "S. Suthram and P. Majhi and G. Sun and P. Kalra and Harris, {H. R.} and Choi, {K. J.} and D. Heh and J. Oh and D. Kelly and R. Choi and Cho, {B. J.} and Hussain, {M. M.} and C. Smith and S. Banerjee and W. Tsai and Thompson, {S. E.} and Tseng, {H. H.} and R. Jammy",

year = "2007",

doi = "10.1109/IEDM.2007.4419049",

language = "English (US)",

pages = "727--730",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

Suthram, S, Majhi, P, Sun, G, Kalra, P, Harris, HR, Choi, KJ, Heh, D, Oh, J, Kelly, D, Choi, R, Cho, BJ, Hussain, MM, Smith, C, Banerjee, S, Tsai, W, Thompson, SE, Tseng, HH & Jammy, R 2007, 'High performance pMOSFETs using Si/Si_1-xGe_x/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node', Technical Digest - International Electron Devices Meeting, IEDM, pp. 727-730. https://doi.org/10.1109/IEDM.2007.4419049

TY - JOUR

T1 - High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

AU - Suthram, S.

AU - Majhi, P.

AU - Sun, G.

AU - Kalra, P.

AU - Harris, H. R.

AU - Choi, K. J.

AU - Heh, D.

AU - Oh, J.

AU - Kelly, D.

AU - Choi, R.

AU - Cho, B. J.

AU - Hussain, M. M.

AU - Smith, C.

AU - Banerjee, S.

AU - Tsai, W.

AU - Thompson, S. E.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2007

Y1 - 2007

N2 - We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

AB - We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

UR - http://www.scopus.com/inward/record.url?scp=50249093257&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4419049

DO - 10.1109/IEDM.2007.4419049

M3 - Conference article

AN - SCOPUS:50249093257

SN - 0163-1918

SP - 727

EP - 730

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419049

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

High performance pMOSFETs using Si/Si_1-xGe_x/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this