High-performance polymer-small molecule blend organic transistors

Richard Hamilton; Jeremy Smith; Simon Ogier; Martin Heeney; John E. Anthony; Iain McCulloch; Janos Veres; Donal D.C. Bradley; Thomas D. Anthopoulos

doi:10.1002/adma.200801725

High-performance polymer-small molecule blend organic transistors

Richard Hamilton, Jeremy Smith, Simon Ogier, Martin Heeney, John E. Anthony, Iain McCulloch, Janos Veres, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

361 Scopus citations

Abstract

A high peak device performance and reduced device variability by combining the film-forming properties of polymers and high mobility small molecules was studied. Top-gate transistors were fabricated on glass substrates with evaporated gold (Au) source and drain electrodes. A 900nm layer of the fluorocarbon polymer CYTOP was used as the dielectric and gate electrodes were evaporated aluminum (Al). The substrates were cleaned by sonication in detergent solution (DECON90) and rinsed with deionized water. The semiconducting layer was spin-coated from a solution of either TIPS-pentacene or diF-TESADT plus the polymer matrix (poly-α-methyl-styrene or polytriarylamine) 1:1 by weight at 4 wt% concentration of solids in tetralin. DSIMS (dynamic secondary ion mass spectrometry) was used to confirm the distribution of the blend components. DSIMS measurements confirmed that there was a higher fraction of small molecule at the top surface.

Original language	English (US)
Pages (from-to)	1166-1171
Number of pages	6
Journal	Advanced Materials
Volume	21
Issue number	10-11
DOIs	https://doi.org/10.1002/adma.200801725
State	Published - Mar 20 2009
Externally published	Yes

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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10.1002/adma.200801725

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abstract = "A high peak device performance and reduced device variability by combining the film-forming properties of polymers and high mobility small molecules was studied. Top-gate transistors were fabricated on glass substrates with evaporated gold (Au) source and drain electrodes. A 900nm layer of the fluorocarbon polymer CYTOP was used as the dielectric and gate electrodes were evaporated aluminum (Al). The substrates were cleaned by sonication in detergent solution (DECON90) and rinsed with deionized water. The semiconducting layer was spin-coated from a solution of either TIPS-pentacene or diF-TESADT plus the polymer matrix (poly-α-methyl-styrene or polytriarylamine) 1:1 by weight at 4 wt% concentration of solids in tetralin. DSIMS (dynamic secondary ion mass spectrometry) was used to confirm the distribution of the blend components. DSIMS measurements confirmed that there was a higher fraction of small molecule at the top surface.",

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AU - Hamilton, Richard

AU - Smith, Jeremy

AU - Ogier, Simon

AU - Heeney, Martin

AU - Anthony, John E.

AU - McCulloch, Iain

AU - Veres, Janos

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

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N2 - A high peak device performance and reduced device variability by combining the film-forming properties of polymers and high mobility small molecules was studied. Top-gate transistors were fabricated on glass substrates with evaporated gold (Au) source and drain electrodes. A 900nm layer of the fluorocarbon polymer CYTOP was used as the dielectric and gate electrodes were evaporated aluminum (Al). The substrates were cleaned by sonication in detergent solution (DECON90) and rinsed with deionized water. The semiconducting layer was spin-coated from a solution of either TIPS-pentacene or diF-TESADT plus the polymer matrix (poly-α-methyl-styrene or polytriarylamine) 1:1 by weight at 4 wt% concentration of solids in tetralin. DSIMS (dynamic secondary ion mass spectrometry) was used to confirm the distribution of the blend components. DSIMS measurements confirmed that there was a higher fraction of small molecule at the top surface.

AB - A high peak device performance and reduced device variability by combining the film-forming properties of polymers and high mobility small molecules was studied. Top-gate transistors were fabricated on glass substrates with evaporated gold (Au) source and drain electrodes. A 900nm layer of the fluorocarbon polymer CYTOP was used as the dielectric and gate electrodes were evaporated aluminum (Al). The substrates were cleaned by sonication in detergent solution (DECON90) and rinsed with deionized water. The semiconducting layer was spin-coated from a solution of either TIPS-pentacene or diF-TESADT plus the polymer matrix (poly-α-methyl-styrene or polytriarylamine) 1:1 by weight at 4 wt% concentration of solids in tetralin. DSIMS (dynamic secondary ion mass spectrometry) was used to confirm the distribution of the blend components. DSIMS measurements confirmed that there was a higher fraction of small molecule at the top surface.

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IS - 10-11

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High-performance polymer-small molecule blend organic transistors

Abstract

ASJC Scopus subject areas

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