TY - JOUR
T1 - High-Performance Single-Crystalline Perovskite Thin-Film Photodetector
AU - Yang, Zhenqian
AU - Deng, Yuhao
AU - Zhang, Xiaowei
AU - Wang, Suo
AU - Chen, Huazhou
AU - Yang, Sui
AU - Khurgin, Jacob
AU - Fang, Nicholas X.
AU - Zhang, Xiang
AU - Ma, Renmin
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-2016-CRG5-2950-03
Acknowledgements: Z.Y., Y.D., and Dr. X.Z. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (Grant Nos. 11574012, 11774014, and 61521004) and the “Youth 1000 Talent Plan.” The research is partially supported by Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI) program under Grant No. N00014-17-1-2588 and the King Abdullah University of Science and Technology Office of Sponsored Research (OSR) (Award OSR-2016-CRG5-2950-03).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2018/1/8
Y1 - 2018/1/8
N2 - The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.
AB - The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.
UR - http://hdl.handle.net/10754/626803
UR - http://doi.wiley.com/10.1002/adma.201704333
UR - http://www.scopus.com/inward/record.url?scp=85042158849&partnerID=8YFLogxK
U2 - 10.1002/adma.201704333
DO - 10.1002/adma.201704333
M3 - Article
SN - 0935-9648
VL - 30
SP - 1704333
JO - Advanced Materials
JF - Advanced Materials
IS - 8
ER -