TY - GEN
T1 - High performance superluminescent diode with InAs quantum-dashes and chirped AlGaInAs barriers active region
AU - Khan, Mohammed Zahed Mustafa
AU - Majid, Mohammed Abdul
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013/11/11
Y1 - 2013/11/11
N2 - The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
AB - The demonstration of high power, ultra-low ripple superluminescent diode using multiple quantum-dash-in-a-well layers with variable barrier thickness is reported. The device exhibits >20 mW power, < 0.3dB ripple, and > 80 nm 3dB bandwidth at ~1.55 μm.
UR - http://hdl.handle.net/10754/312361
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6656386
UR - http://www.scopus.com/inward/record.url?scp=84892706736&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2013.6656386
DO - 10.1109/IPCon.2013.6656386
M3 - Conference contribution
SN - 978-1-4577-1506-8
SP - 95
EP - 96
BT - 2013 IEEE Photonics Conference
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -